vishay IL215AT/ il216at/ il217at document number 83616 rev. 1.6, 19-apr-04 vishay semiconductors www.vishay.com 1 i179083 1 2 3 4 a k nc nc 8 7 6 5 nc b c e optocoupler, phototransistor output, low input current, with base connection features ? high current transfer ratio isolation test voltage, 3000 v rms industry standard soic-8 surface mountable package compatible with dual wave, vapor phase and ir reflow soldering agency approvals ul - file no. e52744 system code y din en 60747-5-2(vde0884) din en 60747-5-5 pending available with option 1 description the IL215AT/ il216at/ il217at are optically cou- pled pairs with a gallium arsenide infrared led and a silicon npn phototransistor. signal information, including a dc level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. the IL215AT/ il216at/ il217at comes in a standard soic-8 small outline package for surface mounting which makes it ideally suited for high density applications with limited space. in addition to eliminating through hole requirements, this package conforms to standards for surface mounted devices. the high ctr at low input current is designed for low power consumption requirements such as cmos microprocessor interfaces. order information available only on tape and reel (conforms to eia standard rs481a) for additional information on the available options refer to option information. absolute maximum ratings t amb = 25 c, unless otherwise specified stresses in excess of the absolute maximum ratings can cause per manent damage to the device. f unctional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. exposure to absolute maximum rating for extended periods of the time can adversely affect reliability. input part remarks IL215AT ctr > 20 %, soic-8 il216at ctr > 50 %, soic-8 il217at ctr > 100 %, soic-8 parameter test condition symbol value unit peak reverse voltage v r 6.0 v forward continuous current i f 60 ma power dissipation p diss 90 mw derate linearly from 25 c 1.2 mw/c
www.vishay.com 2 document number 83616 rev. 1.6, 19-apr-04 vishay IL215AT/ il216at/ il217at vishay semiconductors output coupler electrical characteristics t amb = 25 c, unless otherwise specified minimum and maximum values are testing requirements. typical val ues are characteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. input output coupler parameter test condition symbol value unit collector-emitter breakdown voltage bv ceo 30 v emitter-collector breakdown voltage bv eco 7.0 v collector-base breakdown voltage bv cbo 70 v i cmax dc i cmax dc 50 ma i cmax t < 1.0 ms i cmax 100 ma power dissipation p diss 150 mw derate linearly from 25 c 2.0 mw/c parameter test condition symbol value unit total package dissipation led + detector p tot 240 mw derate linearly from 25 c 3.2 mw/c storage temperature t stg - 55 to + 150 c operating temperature t amb - 55 to + 100 c soldering time at 260 c 10 sec. parameter test condition symbol min ty p. max unit forward voltage i f = 1.0 ma v f 1.0 1.5 v reverse current v r = 6.0 v i r 0.1 100 a capacitance v r = 0 c o 13 pf parameter test condition symbol min ty p. max unit collector-emitter breakdown voltage i c = 10 abv ceo 30 v emitter-collector breakdown voltage i e = 10 abv eco 7.0 v dark current collector-emitter v ce = 10 v, i f = 0 i ceo 5.0 50 na collector-emitter capacitance v ce = 0 c ce 10 pf parameter test condition symbol min ty p. max unit saturation voltage, collector- emitter i f = 1.0 ma, i c = 0.1 ma v cesat 0.4 v isolation test voltage 1 sec. v iso 3000 v rms capacitance (input-output) c io 0.5 pf resistance input to output r io 100 g ?
vishay IL215AT/ il216at/ il217at document number 83616 rev. 1.6, 19-apr-04 vishay semiconductors www.vishay.com 3 current transfer ratio switching characteristics typical characteristics (t amb = 25 c unless otherwise specified) parameter test condition part symbol min ty p. max unit dc current transfer ratio i f = 1.0 ma, v ce = 5.0 v IL215AT ctr dc 20 50 % il216at ctr dc 50 80 % il217at ctr dc 100 130 % parameter test condition symbol min ty p. max unit switching time i c = 2.0 ma, r l = 100 ? , v cc = 10 v t on , t off 3.0 s fig. 1 forward voltage vs. forward current fig. 2 normalized non-saturated and saturated ctr ce vs. led current iIL215AT_01 100 10 1 .1 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 i f - forward current - ma v f - forward voltage - v t a = -55c t a = 100c t a = 25c iIL215AT_02 .1 1 10 100 0.0 0.5 1.0 1.5 nct rce - normalized ctrce v ce =5v normalized to: v ce =10v i f =10ma v ce = 0.4 i f - led current - ma fig. 3 collector-emitter current vs.led current fig. 4 normalized collector-base photocurrent vs. led current iIL215AT_03 .1 1 10 100 0 50 100 150 v ce = 0.4 v v ce =10v i f - led current - ma i ce - collector-emitter current - ma iIL215AT_04 .1 1 10 100 .1 1 10 100 nlcb - normalized lcb i f - led current - ma normalized to: v cb = 9.3 v i f = 1.0 ma
www.vishay.com 4 document number 83616 rev. 1.6, 19-apr-04 vishay IL215AT/ il216at/ il217at vishay semiconductors fig. 5 collector-base photocurrent vs. led current fig. 6 collector-emitter leakage current vs.temp. fig. 7 normalized saturated hfe vs. base current and temperature iIL215AT_05 .1 1 10 100 .1 1 10 100 1000 icb - collector-base current - a v cb = 9.3 v i f - led current - ma iIL215AT_06 100 80 60 40 20 0 -20 t a - ambient temperature - c iceo - collector-emitter - na typical v ce =10 v 10 5 10 4 10 3 10 2 10 1 10 0 10 -1 10 -2 iIL215AT_07 1 10 100 1000 0.0 0.5 1.0 1.5 2.0 25c 50c 70c ib - base current - a nhfe(sat) - normalized saturated hfe normalized to: ib=20 a v ce =10v v ce = 0.4 v fig. 8 normalized non-saturated and saturated ctr ce vs. led current fig. 9 normalized non-saturated and saturated collector-emitter current vs. led current fig. 10 normalized collector-base photocurrent vs. led current iIL215AT_08 .1 1 10 100 0.0 0.5 1.0 1.5 2.0 v ce =.4 v ce =5 i f - led current - ma nctrce - normalized ctrce normalized to: v ce =5v i f =1 ma iIL215AT_09 .1 1 10 100 .01 .1 1 10 100 v ce =5v v ce =.4v i f - led current - ma nice - normalized ice normalized to: v ce =5v i f =1ma iIL215AT_10 .01 .1 1 10 100 1000 .01 .1 1 10 100 i f - led current - ma nicb - normalized icb normalized to: v ce =5v i f =1ma
vishay IL215AT/ il216at/ il217at document number 83616 rev. 1.6, 19-apr-04 vishay semiconductors www.vishay.com 5 fig. 11 collector-base photocurrent vs. led current fig. 12 high to low propagation delay vs. led current and load resistor fig. 13 low to high propagation delay vs. led current and load resistor iIL215AT_11 .01 .1 1 10 100 1000 .1 1 10 100 1000 i f - led current - ma icb - collector-base photocurrent - a v cb = 9.3 v iIL215AT_12 10 15 20 0 5 10 15 20 10 k ? if - led current - ma tphl - high-low propagation delay - s 2k ? 4.7 k ? v cc =5v v th = 1.5 v 0 5 80 iIL215AT_13 10 15 20 0 20 40 60 10 k ? 4.7 k ? 2k ? tplh - low-high propagation delay - s v cc =5v,vth=1.5v 0 5 fig. 14 normalized non-saturated hfe vs. base current and temperature fig. 15 typical switching characteristics vs. base resistance (saturated operation) fig. 16 typical switching times vs. load resistance iIL215AT_14 1000 0.4 0.6 0.8 1.0 1.2 ib - base current - a nhfe - normalized hfe -20c 25c 50c 70c normalized to: i b =20 a v ce =10v 110100 iIL215AT_15 100 50 10 5 1.0 input: =10m pulse width=100 ms duty cycle=50% base-emitter resistance, r be ( ? ) t o ff t on switching time ( s) 10k 50k 100k 500k 1m i f a iIL215AT_16 1000 500 100 50 10 5 1 0.1 0.5 1 5 10 50 100 input: i f =10 ma pulse width = 100 ms duty cycle = 50% t off t o n load resistance rl (k ? ) switching time ( s)
www.vishay.com 6 document number 83616 rev. 1.6, 19-apr-04 vishay IL215AT/ il216at/ il217at vishay semiconductors package dimensions in inches (mm) iIL215AT_17 v cc =5 v input v out r l t off t r 10% 50% 90% t s t pdoff t pdon t on t r t d output input 10% 50% 90% 0 0 fig. 17 switching time test schematic and waveform .036 (.91) .014 (.36) .170 (4.32) .045 (1.14) .260 (6.6) r .010 (.13) .050 (1.27) i178003 40 .240 (6.10) .154 .005 (3.91 .13) .050 (1.27) typ. .016 (.41) .192 .005 (4.88 .13) .004 (.10) .008 (.20) lead coplanarity .0015 (.04) max. .015 .002 (.38 .05) .008 (.20) 7 .058 .005 (1.49 .13) .125 .005 (3.18 .13) pin one id .120 .005 (3.05 .13) c l .021 (.53) 5 max. r.010 (.25) max. .020 .004 (.51 .10) 2 plcs. iso method a
vishay IL215AT/ il216at/ il217at document number 83616 rev. 1.6, 19-apr-04 vishay semiconductors www.vishay.com 7 ozone depleting substa nces policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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